GaTeO2F

semiconductor

· GaTeO2F

GaTeO₂F is an experimental mixed-anion semiconductor compound combining gallium, tellurium, oxygen, and fluorine. This material belongs to the family of halide-based semiconductors and oxyhalides, which are being investigated for their potential in photonic and electronic applications where tunable bandgaps and unique crystal structures are advantageous. GaTeO₂F remains primarily a research-phase material; its practical adoption is limited, but compounds in this chemical family show promise for optoelectronic devices, photocatalysis, and next-generation semiconductor platforms where conventional III-V semiconductors have limitations.

photonic devices (research)optoelectronic semiconductorsphotocatalytic applicationsbandgap engineeringthin-film electronicsnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-1.749e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTeO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control