GaTeN3

ceramic

· GaTeN3

GaTeN₃ is an experimental ternary ceramic compound combining gallium, tellurium, and nitrogen—a material class under active research for wide-bandgap semiconductor and optoelectronic applications. While not yet commercialized at scale, compounds in this family are investigated for high-temperature electronics, UV/visible light emission, and radiation-hard applications where conventional semiconductors reach their limits. Its potential advantages over established alternatives lie in thermal stability and bandgap tunability, though processing challenges and limited production maturity currently restrict its use to research and specialized defense/space programs.

wide-bandgap semiconductorshigh-temperature electronicsUV optoelectronicsradiation-resistant devicesresearch/prototype applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.7239	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.860	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTeN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental