GaTeI₇ is a layered ceramic compound composed of gallium, tellurium, and iodine that belongs to the family of mixed-halide chalcogenides. This is a research-phase material being investigated for its potential in semiconductor and optoelectronic applications, where its layered structure offers opportunities for controlled exfoliation and device engineering. The compound is of interest to researchers exploring novel photodetectors, thin-film electronics, and van der Waals heterostructures, where the ability to produce atomically thin layers could enable new device architectures not achievable with conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9.920 | GPa | — | ||
Exfoliation Energy(Eexf) | 94.04 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 4.210 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.473 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.556 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.51 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.07466 | C/m² | — | ||
Seebeck Coefficient(S) | -302.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2524 | eV/atom | — |