GaTeCl is a ternary ceramic compound combining gallium, tellurium, and chlorine elements, belonging to the family of layered chalcogenide materials. This is primarily a research-phase material rather than an established industrial ceramic; compounds in this chemical family are investigated for their potential in optoelectronic devices, photovoltaic applications, and layered heterostructure engineering where weak interlayer bonding enables mechanical exfoliation. Engineers would consider GaTeCl-class materials when designing next-generation semiconductors, 2D material stacks, or specialized optical components that exploit the unique electronic and mechanical properties of mixed-anion ternary systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14.89 | GPa | — | ||
Exfoliation Energy(Eexf) | 80.39 | meV/atom | — | ||
Poisson's Ratio(ν) | -0.8600 | - | — | ||
Shear Modulus(G) | 1.530 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.415 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.005 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.28 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -217.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7142 | eV/atom | — |