GaTe is a III-VI semiconductor compound composed of gallium and tellurium, belonging to the family of layered van der Waals materials. While primarily a research compound rather than a production material in mainstream engineering, GaTe is investigated for optoelectronic and photovoltaic applications due to its tunable bandgap and direct band transition properties. Its layered crystal structure makes it a candidate for two-dimensional (2D) device engineering, particularly in next-generation flexible electronics, photodetectors, and heterostructure devices where conventional bulk semiconductors are limited by mechanical rigidity or optical performance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,776.8 | ksi | — | ||
Exfoliation Energy(Eexf) | 65.97 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 2,397.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1902 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 0.9170 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 15.42 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -204.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.6504 | eV/atom | — | ||
| ↳ | -0.3503 | eV/atom | — |