GaTe

Name: GaTe
Brand: MatWorld

semiconductor

· GaTe

GaTe is a III-VI semiconductor compound composed of gallium and tellurium, belonging to the family of layered van der Waals materials. While primarily a research compound rather than a production material in mainstream engineering, GaTe is investigated for optoelectronic and photovoltaic applications due to its tunable bandgap and direct band transition properties. Its layered crystal structure makes it a candidate for two-dimensional (2D) device engineering, particularly in next-generation flexible electronics, photodetectors, and heterostructure devices where conventional bulk semiconductors are limited by mechanical rigidity or optical performance.

2D nanomaterial researchphotodetector developmentoptoelectronic devicesflexible electronicsvan der Waals heterostructuresphotovoltaic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	3,776.8	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	65.97	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	2,397.5	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1902	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.9170	eV	DFT · OptB88vdW
↳	1.720	eV	DFT · TBmBJ
↳	1.800	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	15.42	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	12.13	-	DFT · OptB88vdW
↳	8.444	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.7233	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.433	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00414	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00139	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-204.7	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	188.2	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	28.87	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.3503	eV/atom	DFT · OptB88vdW
↳	-0.6504	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTe — Properties & Data | MatWorld

GaTe

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Physical Properties

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