GaTe4Mo4Se4 is a mixed-metal chalcogenide compound combining gallium, molybdenum, tellurium, and selenium—a quaternary layered material currently in the research phase rather than established commercial production. This compound belongs to the family of transition-metal dichalcogenides and related structures, which are investigated for potential applications in optoelectronics, photocatalysis, and energy storage where layer-dependent properties and tunable band gaps are advantageous. Engineers and researchers evaluate such materials when seeking alternatives to conventional semiconductors with enhanced light-matter interaction, chemical reactivity, or two-dimensional transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.832 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00410 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4486 | eV/atom | — |