GaTe₂ is a layered semiconductor ceramic compound composed of gallium and tellurium, belonging to the family of transition metal dichalcogenides (TMDs). This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in optoelectronics and solid-state devices that exploit its layered crystal structure and semiconducting properties. Engineers investigating GaTe₂ typically focus on its capability for two-dimensional material engineering, tunable bandgap characteristics, and integration into next-generation electronic and photonic devices where layered semiconductors offer advantages over conventional bulk materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,325.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 1,228.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2122 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2893 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.03032 | eV/atom | — |