GaTc is a gallium-based ternary semiconductor compound combining gallium with tellurium and a third constituent element. As a compound semiconductor in the gallium chalcogenide family, it is primarily of research and development interest for optoelectronic and infrared applications where direct bandgap semiconductors offer advantages over elemental materials. This material class is explored for specialized photonic devices, infrared detectors, and high-speed electronics where III-VI compound properties could enable performance beyond conventional III-V alternatives, though industrial adoption remains limited compared to more mature GaAs or GaN technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3411 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.420 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01680 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.03768 | eV/atom | — |