GaTbO3

semiconductor

· GaTbO3

GaTbO3 is a mixed rare-earth oxide semiconductor compound combining gallium with terbium in a crystalline ceramic structure. This material remains primarily in research and development phases, investigated for potential applications in optical and optoelectronic devices where rare-earth doping and wide bandgap semiconducting behavior could enable enhanced performance. The gallium-rare-earth oxide family shows promise for high-temperature electronics, photonic devices, and specialized sensor applications where conventional semiconductors reach performance limits.

optoelectronic researchwide-bandgap semiconductorsrare-earth photonicshigh-temperature sensingoptical materials developmentexperimental semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.176	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.708	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTbO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control