GaTaO3 is a ternary oxide semiconductor compound combining gallium and tantalum, belonging to the family of mixed-metal oxides used in photocatalytic and optoelectronic applications. This material is primarily of research interest rather than established production use, explored for photocatalytic water splitting, environmental remediation, and potentially optoelectronic devices where its bandgap and crystal structure offer advantages over single-component alternatives. Engineers evaluating GaTaO3 would consider it for emerging clean-energy or environmental technologies where tailored oxide semiconductors can outperform conventional materials, though maturity and scalability remain development-stage considerations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9890 | eV | — | ||
| ↳ | 2.100 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000168 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.396 | eV/atom | — | ||
| ↳ | -0.04000 | eV/atom | — |