GaTaO2S

semiconductor

· GaTaO2S

GaTaO2S is an oxyhalide semiconductor compound combining gallium, tantalum, oxygen, and sulfur elements, representing an emerging class of mixed-anion semiconductors under active research. This material is being investigated for photocatalytic applications, particularly water splitting and environmental remediation, owing to its tunable band gap and the potential synergistic effects of incorporating both oxide and sulfide anion frameworks. Compared to conventional single-anion semiconductors (such as pure oxides or sulfides), mixed-anion compounds like GaTaO2S offer greater flexibility in tailoring electronic structure and light absorption, making them attractive alternatives for next-generation energy conversion and pollution control technologies, though industrial-scale synthesis and deployment remain largely in the developmental stage.

photocatalytic water splittingenvironmental remediation catalystshydrogen productionphotoelectrochemical devicesresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.0000260	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control