GaTaO2N

ceramic

· GaTaO2N

GaTaO2N is an oxynitride ceramic compound combining gallium, tantalum, oxygen, and nitrogen elements. This is a research-phase material being investigated primarily in photocatalysis and optoelectronic applications, where the mixed anion (oxygen-nitrogen) structure can tune bandgap and light absorption properties compared to conventional oxides or nitrides alone. The material family shows promise for visible-light-driven environmental remediation and energy conversion, though it remains largely in the development stage without widespread commercial deployment.

photocatalysiswater purificationvisible-light catalystsoptoelectronicssemiconductor researchenvironmental remediation

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.1084	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental