GaTaN3

ceramic

· GaTaN3

GaTaN₃ is an experimental gallium tantalum nitride ceramic compound being investigated for advanced semiconductor and refractory applications. This material belongs to the family of ternary nitride ceramics and represents research into high-entropy or multi-component nitride systems that may offer enhanced thermal stability, hardness, or electrical properties compared to binary nitrides. While not yet widely commercialized, compounds in this class are of interest for extreme-environment applications where conventional ceramics or transition metal nitrides reach their performance limits.

research ceramicshigh-temperature refractory coatingswide-bandgap semiconductorswear-resistant surfacesthermal barrier applicationsadvanced materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.870	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental