GaSnON2

ceramic

· GaSnON2

GaSnON2 is an experimental ternary oxide-nitride ceramic compound combining gallium, tin, oxygen, and nitrogen elements. This material belongs to the family of mixed-anion ceramics being investigated for wide-bandgap semiconductor and photocatalytic applications, where the nitrogen incorporation can modify electronic structure and optoelectronic properties compared to conventional oxides. Research interest in this compound stems from potential use in visible-light photocatalysis, advanced optoelectronics, or as a component in multiferroic systems, though it remains largely in the development phase without widespread commercial deployment.

photocatalytic water treatmentoptoelectronic semiconductorsvisible-light active catalystswide-bandgap electronics researchenvironmental remediationadvanced ceramic materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.2360	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSnON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental