GaSnO2S

ceramic

· GaSnO2S

GaSnO₂S is an experimental quaternary semiconductor ceramic composed of gallium, tin, oxygen, and sulfur elements. This compound belongs to the family of mixed-metal oxysulfide semiconductors being investigated for optoelectronic and photocatalytic applications where conventional binary or ternary semiconductors show limitations. The material is primarily of research interest rather than established industrial production, with potential value in photocatalytic water splitting, environmental remediation, and advanced optoelectronic devices where tunable band gaps and mixed-anion chemistry offer advantages over conventional alternatives like TiO₂ or CdS.

photocatalytic water splittingenvironmental remediation (pollutant degradation)optoelectronic devicesresearch-phase semiconductorsvisible-light photocatalystsnext-generation solar applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.3947	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSnO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental