GaSnH2

ceramic

· JVASP-134904· GaSnH2

GaSnH2 is a hydride-based compound in the III-IV semiconductor family, representing an experimental material system combining gallium, tin, and hydrogen. This composition falls within active research into wide-bandgap semiconductors and represents exploration of hybrid hydride materials for potential optoelectronic and semiconductor applications, though industrial maturity and commercial availability remain limited.

Experimental semiconductorsOptoelectronic device researchWide-bandgap material developmentThin-film deposition studiesMaterials characterization researchNext-generation photovoltaics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.732	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.6056	eV/atom	—
Formation Energy(ΔHf)	0.6049	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSnH2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental