GaSn7 is an experimental intermetallic ceramic compound combining gallium and tin, representing a research-phase material within the broader family of III-IV semiconductor and intermetallic systems. While not yet established in mainstream industrial production, this composition is being investigated for potential applications in advanced electronics and high-temperature materials where gallium and tin combinations offer unique phase stability or functional properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1947 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00560 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.00556 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data