GaSn3 is an intermetallic compound belonging to the gallium-tin system, classified as a ceramic material in its crystal structure and bonding characteristics. While not widely established in mainstream industrial production, this compound represents research interest in semiconductor and thermoelectric material families where gallium-based intermetallics show potential for electronic and thermal management applications. The material's composition and phase stability make it a candidate for investigation in emerging device technologies, though practical engineering adoption remains limited compared to more mature gallium compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2417 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06500 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.06502 | eV/atom | — |