GaSn3 is an intermetallic compound belonging to the gallium-tin system, classified as a ceramic material in its crystal structure and bonding characteristics. While not widely established in mainstream industrial production, this compound represents research interest in semiconductor and thermoelectric material families where gallium-based intermetallics show potential for electronic and thermal management applications. The material's composition and phase stability make it a candidate for investigation in emerging device technologies, though practical engineering adoption remains limited compared to more mature gallium compounds.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.690 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06500 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.06502 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data