GaSmO3 is a ternary oxide semiconductor compound composed of gallium, samarium, and oxygen, belonging to the perovskite or perovskite-related oxide family. This is primarily a research material under investigation for advanced semiconductor and photonic applications rather than an established commercial compound. The material shows promise in optoelectronic devices, photocatalysis, and potentially in next-generation solid-state electronics where rare-earth doping (samarium) combined with gallium oxide's wide bandgap offers tunable optical and electrical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.133 | eV | DFT · PBE | ||
Magnetic Moment(μB) | 0.000 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.776 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data