GaSiO2N
ceramicGaSiO₂N is an oxynitride ceramic compound combining gallium, silicon, oxygen, and nitrogen phases, representing a specialized material class intermediate between traditional oxides and nitrides. This material family is primarily explored in research contexts for high-temperature structural applications and semiconducting/optoelectronic devices, where the mixed anionic structure offers potential for tailored thermal stability, hardness, and band gap properties beyond conventional single-phase ceramics. Industrial adoption remains limited, but gallium-based oxynitrides are of interest in aerospace, automotive, and advanced electronics sectors seeking thermally stable insulators or functional ceramics with engineered electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.00142 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.000 | eV/atom | — |