GaSi₂N₃ is a gallium silicon nitride ceramic compound that belongs to the family of advanced nitride ceramics, combining the properties of gallium nitride semiconductors with silicon nitride's structural robustness. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in high-temperature structural components, semiconductor device packaging, and extreme-environment applications where thermal stability and hardness are critical. The compound represents an exploration of mixed-metal nitride systems that could offer improved thermal conductivity and mechanical performance compared to single-phase alternatives in specialized aerospace, automotive, or semiconductor contexts.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1487 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.108 | eV | DFT · OptB88vdW | ||
| ↳ | 2.134 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 7.165 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 20.04 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2755 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7155 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data