GaScN3 — Properties & Data | MatWorld

GaScN3

ceramic

· GaScN3

GaScN3 is an experimental ternary nitride ceramic compound combining gallium, scandium, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and advanced ceramics being investigated for next-generation electronic and optoelectronic device applications. Research interest in GaScN3 centers on its potential for high-temperature stability, wide bandgap properties, and thermal management in extreme environments where conventional gallium nitride (GaN) or aluminum nitride (AlN) may be limiting.

high-temperature semiconductorswide-bandgap electronics researchthermal management devicespower electronics (development stage)RF/microwave components (exploratory)extreme environment applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.528	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaScN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental