GaSbOFN

ceramic

· GaSbOFN

GaSbOFN is an experimental oxynitride ceramic compound combining gallium, antimony, oxygen, and nitrogen—a quaternary ceramic system under investigation for its potential semiconductor and optical properties. This material family is primarily a research-phase composition being explored for high-temperature structural applications and possible optoelectronic or photocatalytic roles, positioning it as an alternative to conventional binary nitrides or oxides where mixed-anion bonding could provide enhanced thermal stability or tunable electronic characteristics.

experimental semiconductorshigh-temperature ceramicsphotocatalytic coatingsoptical devices (early research)thermal barrier materialswide-bandgap electronics research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.0000116	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSbOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental