GaSbO4 is an oxychalcogenide ceramic compound combining gallium, antimony, and oxygen. This material is primarily of research interest rather than established industrial production, belonging to the family of compound semiconductors and mixed-valence oxides that show potential for optoelectronic and photocatalytic applications. Its notable characteristics within this material family include the possibility of tailored band gap properties and mixed cation chemistry, making it relevant for engineers exploring emerging materials for advanced electronic or photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2294 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7870 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.733 | eV/atom | — |