GaSbO2N

ceramic

· GaSbO2N

GaSbO2N is an experimental oxynitride ceramic compound combining gallium, antimony, oxygen, and nitrogen elements. This material belongs to the family of III-V oxynitride semiconductors and is primarily investigated in research settings for optoelectronic and photocatalytic applications where the combination of anion chemistry offers tunable bandgap properties. The material's mixed anionic structure (oxygen + nitrogen) is designed to enhance visible-light absorption and catalytic performance compared to conventional binary nitrides or oxides, making it of interest for next-generation solar cells, photocatalytic water splitting, and visible-light-driven environmental remediation technologies.

photocatalytic water splittingvisible-light photocatalystsoptoelectronic devicessolar energy conversionenvironmental remediationresearch semiconductors

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00563	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.020	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental