GaSbN3

ceramic

· GaSbN3

GaSbN3 is an experimental III-V nitride ceramic compound combining gallium, antimony, and nitrogen. This material belongs to the family of wide-bandgap semiconductors and nitride ceramics under active research for next-generation optoelectronic and high-temperature applications. The antimony incorporation into gallium nitride represents an emerging approach to engineer bandgap properties and thermal stability beyond conventional GaN, though it remains largely in development phase with limited industrial deployment.

high-temperature semiconductorsoptoelectronic deviceswide-bandgap electronicsthermal management systemsRF/microwave componentsresearch and development applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.030	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.780	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSbN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental