GaSb

Gallium antimonide (GaSb) is a III–V compound semiconductor with a zinc-blende crystal structure, formed from gallium and antimony elements. It is primarily used in infrared optoelectronics and high-speed electronic devices, where its narrow bandgap and strong absorption in the mid-infrared region make it valuable for thermal imaging detectors, infrared LEDs, and laser diodes. GaSb is also employed in high-frequency transistors and integrated circuits where carrier mobility and saturation velocity exceed those of silicon, and its lattice-matching properties enable it as a substrate for related III–V heterostructures; it competes with indium antimonide (InSb) for certain infrared applications but offers advantages in manufacturability and thermal stability.