GaSb (gallium antimonide) is a III-V compound semiconductor ceramic used primarily in infrared optoelectronics and high-speed electronic devices. It is valued in the aerospace, defense, and telecommunications sectors for applications requiring mid-infrared detection and emission, where its narrow bandgap provides superior performance compared to silicon or germanium alternatives at elevated temperatures. The material also serves as a substrate for heterostructure devices in quantum well lasers and thermal imaging systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.374 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08490 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.03534 | eV/atom | — |