GaSb₃ is a gallium antimonide compound ceramic belonging to the III–V semiconductor family, though the stoichiometry (three antimonide atoms per gallium) is atypical and suggests this may be a research-phase material or a specialized ternary/quaternary derivative rather than a standard binary compound. This composition sits within the broader gallium antimonide material system, which is valued for infrared optoelectronics and high-frequency/high-temperature device applications. Engineers would investigate this composition primarily in research contexts for potential advantages in mid-to-long-wave infrared sensing, thermal imaging, or high-power semiconductor devices where the modified stoichiometry might offer improved bandgap tuning, thermal stability, or device performance compared to conventional GaSb.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.882 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2860 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2117 | eV/atom | — |