GaSb
semiconductorGallium antimonide (GaSb) is a III–V compound semiconductor with a zinc-blende crystal structure, formed from gallium and antimony elements. It is primarily used in infrared optoelectronics and high-speed electronic devices, where its narrow bandgap and strong absorption in the mid-infrared region make it valuable for thermal imaging detectors, infrared LEDs, and laser diodes. GaSb is also employed in high-frequency transistors and integrated circuits where carrier mobility and saturation velocity exceed those of silicon, and its lattice-matching properties enable it as a substrate for related III–V heterostructures; it competes with indium antimonide (InSb) for certain infrared applications but offers advantages in manufacturability and thermal stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | — | |
Elastic Anisotropy(AU) | — | - | — | — | |
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | — | |
Poisson's Ratio(ν)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Shear Modulus(G)3 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
| ↳ | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | — | W/(m·K) | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — median of 2 measurements | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |