GaRuO2N

ceramic

· GaRuO2N

GaRuO2N is an experimental ceramic compound combining gallium, ruthenium, oxygen, and nitrogen—a quaternary nitride oxide belonging to the family of transition-metal oxynitrides. This material is primarily investigated in research contexts for advanced functional applications where the combination of metallic (Ru) and semiconducting (Ga) character, enhanced by nitrogen doping, may offer novel electronic, catalytic, or photochemical properties not achievable in simpler oxides alone.

research and developmentcatalytic materialssemiconductor applicationsphotochemical deviceshigh-temperature ceramicsthin-film deposition

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.02012	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.220	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaRuO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental