GaReN3 is a gallium-rare earth nitride ceramic compound, likely a ternary or quaternary nitride system combining gallium with rare earth elements. This material family is primarily of research interest for semiconductor and high-temperature applications, with potential in optoelectronics, wide-bandgap devices, and thermal management systems where conventional nitrides reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000471 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9000 | eV/atom | — |