GaRbO3 is a mixed-metal oxide semiconductor compound containing gallium and rubidium. This is a research-phase material within the perovskite and complex oxide family; it is not yet established in mainstream industrial production. The compound is of interest to materials scientists exploring novel semiconducting oxides for optoelectronic and photocatalytic applications, where mixed-valent metal oxides can offer tunable band gaps and enhanced charge transport compared to single-metal alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.967 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -1.560 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.371 | eV/atom | DFT | ||
| ↳ | 2.540 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data