GaRbO3

semiconductor

· GaRbO3

GaRbO3 is a mixed-metal oxide semiconductor compound containing gallium and rubidium. This is a research-phase material within the perovskite and complex oxide family; it is not yet established in mainstream industrial production. The compound is of interest to materials scientists exploring novel semiconducting oxides for optoelectronic and photocatalytic applications, where mixed-valent metal oxides can offer tunable band gaps and enhanced charge transport compared to single-metal alternatives.

photocatalysis researchoptoelectronic devices (developmental)wide-bandgap semiconductorsthin-film deposition studiesenergy conversion (exploratory)materials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.967	eV	—
↳	0.000	eV	—
Magnetic Moment(μB)	-1.560	μB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-1.371	eV/atom	—
↳	2.540	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaRbO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control