GaPtO2N

ceramic

· GaPtO2N

GaPtO2N is an experimental mixed-metal oxynitride ceramic combining gallium, platinum, oxygen, and nitrogen phases. This material family is primarily investigated in research settings for advanced catalytic and optoelectronic applications, where the combination of transition metal (Pt) and semiconductor (Ga) components can enable novel electronic properties and surface chemistry not achievable in single-phase oxides or nitrides.

photocatalysis researchelectrocatalysis applicationsoptoelectronic deviceshigh-temperature catalystssemiconductor researchthin-film coatings

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00550	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaPtO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental