GaPSe is a III-V semiconductor ceramic compound composed of gallium, phosphorus, and selenium, belonging to the family of mixed-anion semiconductors. This material is primarily of research interest for optoelectronic and photonic applications, where its wide bandgap and crystal structure offer potential advantages in ultraviolet to infrared wavelength detection and emission. Engineers consider GaPSe for specialized applications requiring tunable optical properties and high-frequency electronic performance, though it remains less commercialized than conventional GaAs or GaP semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,365.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 5,032.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1802 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5928 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.1679 | eV/atom | — |