Gallium phosphide (GaP) is a III-V compound semiconductor ceramic with a direct bandgap, commonly used in optoelectronic and photonic applications where efficient light emission and detection are required. It serves as a foundation material in light-emitting diodes (LEDs), particularly in green and yellow wavelength ranges, and in photovoltaic cells for space and high-efficiency terrestrial applications. Engineers select GaP over alternative semiconductors when wavelength specificity, radiation hardness, or thermal stability in demanding environments becomes critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,508.6 | ksi | — | ||
Poisson's Ratio(ν) | -0.2600 | - | — | ||
Shear Modulus(G) | 4,269.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1464 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7090 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2076 | eV/atom | — |