Gallium phosphide (GaP) is a III-V compound semiconductor ceramic with a direct bandgap, commonly used in optoelectronic and photonic applications where efficient light emission and detection are required. It serves as a foundation material in light-emitting diodes (LEDs), particularly in green and yellow wavelength ranges, and in photovoltaic cells for space and high-efficiency terrestrial applications. Engineers select GaP over alternative semiconductors when wavelength specificity, radiation hardness, or thermal stability in demanding environments becomes critical.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,508.6 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | -0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,269.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1464 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.7090 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.2076 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data