GaPS

ceramic
· JVASP-121052· GaPS

Gallium phosphide (GaP) is a III-V compound semiconductor ceramic with a direct bandgap, commonly used in optoelectronic and photonic applications where efficient light emission and detection are required. It serves as a foundation material in light-emitting diodes (LEDs), particularly in green and yellow wavelength ranges, and in photovoltaic cells for space and high-efficiency terrestrial applications. Engineers select GaP over alternative semiconductors when wavelength specificity, radiation hardness, or thermal stability in demanding environments becomes critical.

LED optoelectronicsspace photovoltaicshigh-brightness indicatorsradiation-hard sensorsintegrated photonicshigh-temperature semiconductor applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
51.77
GPa
Poisson's Ratio(ν)
-0.2600
-
Shear Modulus(G)
29.44
GPa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
4.053
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
0.000
eV
Magnetic Moment(μB)
0.000
µB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.7090
eV/atom
Formation Energy(ΔHf)
0.2076
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.