GaPrO3 — Properties & Data | MatWorld

GaPrO3

semiconductor

· GaPrO3

GaPrO3 is a rare-earth-doped gallium oxide compound, a semiconductor ceramic belonging to the family of wide-bandgap materials increasingly studied for next-generation power electronics and optoelectronic devices. This material remains largely in the research and development phase, with potential applications driven by its wide bandgap properties and rare-earth doping, which can tailor optical and electronic characteristics for specialized high-temperature or high-voltage operating environments where conventional semiconductors fall short.

Wide-bandgap power electronics (research)High-temperature semiconductor devicesOptoelectronic and photonic applicationsRadiation-resistant electronicsNext-generation power conversionExperimental device fabrication

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.177	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.728	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaPrO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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