GaPmO3 is a gallium-based phosphorus–molybdenum oxide compound belonging to the semiconductor family, likely explored in materials research for functional and optoelectronic applications. This experimental composition represents an understudied member of mixed-metal oxide semiconductors, with potential relevance to photocatalysis, solid-state ionics, or visible-light-responsive device applications. While not yet established in mainstream industrial production, related gallium oxide and phosphomolybdate compounds show promise where conventional semiconductors face thermal or chemical limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.372 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.776 | eV/atom | — |