GaPmO3 — Properties & Data | MatWorld

GaPmO3

semiconductor

· GaPmO3

GaPmO3 is a gallium-based phosphorus–molybdenum oxide compound belonging to the semiconductor family, likely explored in materials research for functional and optoelectronic applications. This experimental composition represents an understudied member of mixed-metal oxide semiconductors, with potential relevance to photocatalysis, solid-state ionics, or visible-light-responsive device applications. While not yet established in mainstream industrial production, related gallium oxide and phosphomolybdate compounds show promise where conventional semiconductors face thermal or chemical limitations.

photocatalytic materials (research)wide-bandgap semiconductorssolid-state ionics/electrolytesoptoelectronic thin filmsenvironmental remediation devicesadvanced materials R&D

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.372	eV	DFT · PBE
Magnetic Moment(μB)	0.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.776	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaPmO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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