GaP2 is a gallium phosphide compound ceramic belonging to the III-V semiconductor family, potentially formed as a higher phosphide phase or mixed-valence compound. While not commonly documented in standard engineering databases, gallium phosphide materials are primarily investigated for optoelectronic and semiconductor applications where direct bandgap properties and thermal stability are critical. This composition may represent an experimental or specialized variant relevant to research contexts in photonics, high-temperature electronics, or advanced semiconductor device development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1359 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3459 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.05850 | eV/atom | — |