GaNpO3

semiconductor

· GaNpO3

GaNpO3 is an experimental gallium nitride-based oxide compound belonging to the wide-bandgap semiconductor family, currently in research and development rather than established commercial production. This material is being investigated for next-generation optoelectronic and power electronic applications where the combination of gallium nitride's inherent properties with phosphorus and oxygen incorporation may enable enhanced performance in high-temperature, high-power, or UV-sensitive device architectures. Its potential significance lies in extending the material platform beyond conventional GaN and related III-V compounds for specialized niche applications where thermal stability, breakdown voltage, or light-emission characteristics demand alternative phase compositions.

experimental optoelectronic deviceswide-bandgap power semiconductorshigh-temperature electronics researchUV detection prototypesnext-generation RF devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5490	eV	—
Magnetic Moment(μB)	0.8000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.695	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNpO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control