GaNpO3 is an experimental gallium nitride-based oxide compound belonging to the wide-bandgap semiconductor family, currently in research and development rather than established commercial production. This material is being investigated for next-generation optoelectronic and power electronic applications where the combination of gallium nitride's inherent properties with phosphorus and oxygen incorporation may enable enhanced performance in high-temperature, high-power, or UV-sensitive device architectures. Its potential significance lies in extending the material platform beyond conventional GaN and related III-V compounds for specialized niche applications where thermal stability, breakdown voltage, or light-emission characteristics demand alternative phase compositions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5490 | eV | DFT · PBE | ||
Magnetic Moment(μB) | 0.8000 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.695 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data