GaNO

ceramic
· JVASP-114278· GaNO

Gallium nitride oxynitride (GaNO) is an advanced ceramic compound combining gallium nitride with oxygen incorporation, representing an emerging material in the wide-bandgap semiconductor and ceramic family. While primarily in research and development stages, GaNO is being investigated for high-temperature structural applications and advanced electronic devices where enhanced oxidation resistance and modified bandgap properties compared to pure GaN offer potential advantages over conventional nitride ceramics.

High-temperature structural ceramicsPower electronics and RF devicesOxidation-resistant coatingsWide-bandgap semiconductor researchThermal barrier applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
8,286.7
range -161–16,734.5median of 2 measurements
ksi
Poisson's Ratio(ν)
0.05000
-
Shear Modulus(G)
-353.9
range -517.8–-190median of 2 measurements
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
0.1517
lb/in³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
0.000
eV
Magnetic Moment(μB)
0.000
µB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
2.181
eV/atom
Formation Energy(ΔHf)
0.9390
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.