GaNO

ceramic

· JVASP-114278· GaNO

Gallium nitride oxynitride (GaNO) is an advanced ceramic compound combining gallium nitride with oxygen incorporation, representing an emerging material in the wide-bandgap semiconductor and ceramic family. While primarily in research and development stages, GaNO is being investigated for high-temperature structural applications and advanced electronic devices where enhanced oxidation resistance and modified bandgap properties compared to pure GaN offer potential advantages over conventional nitride ceramics.

High-temperature structural ceramicsPower electronics and RF devicesOxidation-resistant coatingsWide-bandgap semiconductor researchThermal barrier applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	8,286.7 range -161–16,734.5median of 2 measurements	ksi	—
Poisson's Ratio(ν)	0.05000	-	—
Shear Modulus(G)	-353.9 range -517.8–-190median of 2 measurements	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1517	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	2.181	eV/atom	—
Formation Energy(ΔHf)	0.9390	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNO

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental