GaNO₄ is an experimental gallium oxynitride ceramic compound that combines gallium, nitrogen, and oxygen in a mixed-valence ceramic matrix. This material family is primarily of research interest for its potential in wide-bandgap semiconductor and refractory applications where nitrogen incorporation can modify electronic properties and thermal stability compared to conventional gallium oxide ceramics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1330 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 4.040 | eV | DFT · OptB88vdW | ||
| ↳ | 6.325 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 3.500 | - | DFT · OptB88vdW | ||
| ↳ | 2.692 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2920 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6347 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data