GaNO4

ceramic

· JVASP-114280· GaNO4

GaNO₄ is an experimental gallium oxynitride ceramic compound that combines gallium, nitrogen, and oxygen in a mixed-valence ceramic matrix. This material family is primarily of research interest for its potential in wide-bandgap semiconductor and refractory applications where nitrogen incorporation can modify electronic properties and thermal stability compared to conventional gallium oxide ceramics.

wide-bandgap semiconductorshigh-temperature refractory coatingsexperimental power electronicsceramic composites researchthermal barrier applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	3.681	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	4.040	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2920	eV/atom	—
Formation Energy(ΔHf)	-0.6347	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNO4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental