GaNO4
ceramic· JVASP-114280· GaNO4
GaNO₄ is an experimental gallium oxynitride ceramic compound that combines gallium, nitrogen, and oxygen in a mixed-valence ceramic matrix. This material family is primarily of research interest for its potential in wide-bandgap semiconductor and refractory applications where nitrogen incorporation can modify electronic properties and thermal stability compared to conventional gallium oxide ceramics.
wide-bandgap semiconductorshigh-temperature refractory coatingsexperimental power electronicsceramic composites researchthermal barrier applications
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.681 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 4.040 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2920 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6347 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.