GaNO2

ceramic

· JVASP-113624· GaNO2

Gallium oxynitride (GaNO₂) is an advanced ceramic compound combining gallium, oxygen, and nitrogen, representing an emerging material in the wider family of III-V nitride ceramics. This is primarily a research-stage material being investigated for high-temperature and high-performance applications where its chemical stability and potential thermal properties could offer advantages over traditional oxides or single-phase nitrides. The material's development is driven by semiconductor and thermoelectric research communities seeking improved performance in extreme environments.

High-temperature ceramics (research)Semiconductor devices (experimental)Thermal barrier coatings (development stage)Wide-bandgap electronicsThermoelectric applicationsChemical-resistant refractory materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1188	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.9845	eV/atom	—
Formation Energy(ΔHf)	-0.3038	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNO2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental