GaNbON2

semiconductor

· GaNbON2

GaNbON2 is an experimental oxynitride semiconductor compound combining gallium, niobium, oxygen, and nitrogen—a member of the emerging mixed-anion semiconductor family that aims to extend bandgap engineering beyond conventional binary nitrides and oxides. This material is primarily of research interest for next-generation optoelectronic and wide-bandgap device applications, where its unique electronic structure could enable improved performance in UV photonics, high-voltage power electronics, or photocatalytic applications compared to established GaN or Ga2O3 platforms; however, synthesis routes and scalability remain under development.

wide-bandgap semiconductorsUV optoelectronics (research)power electronics (emerging)photocatalysis (research)high-temperature devices (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.000158	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaNbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control